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  dimensions in inches and (millimeters) - 14 - version: a07 SSL22 - ssl24 2.0 amp. surface mount low v f schottky barrier rectifiers smb/do-214aa .083(2.10) .077(1.95) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .209(5.30) .201(5.10) features  for surface mounted application  metal silicon junction, majority carrier conduction  low forward voltage drop  easy pick and place  high surge current capability  plastic material used carries underwriters laboratory classification 94v-0  epitaxial construction  high temperature soldering: 260 o c / 10 seconds at terminals m echanical data  cases: molded plastic  terminals: matte tin plating  polarity: indicated by cathode band  packaging: 12mm tape per eia std rs-481  weight: 0.093 gram m aximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol SSL22 ssl23 ssl24 unit s maximum recurrent peak reverse voltage v rrm 20 30 40 v maximum rms voltage v rms 14 21 28 v maximum dc blocking voltage v dc 20 30 40 v maximum average forward rectified current see fig. 1 i (av) 2.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 80 a maximum instantaneous forward voltage (note 1) @ 2.0a v f 0.41 v 0.4 maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =100 o c i r 50 60 ma ma maximum thermal resistance (note 2) r jl r ja 25 70 o c /w marking code sl22 sl23 sl24 operating temperature range t j -55 to +125 o c storage temperature range t stg -55 to + 150 o c notes: 1. pulse test with pw=300 usec, 1% duty cycle. 2. measured on p.c. board with 0. 4 x .4?(10 x 10mm) copper pad areas.
ra tings and characteristic cur ves (ssl22 thru ssl24) fig.2- maximum non-repetitive for w ard surge current p e a k f o r w a r d s u r g e c u r r e n t . ( a ) 1 10 100 0 20 40 80 60 100 number of cycles a t 60hz a t ra ted tl 8.3ms single half sine w ave jedec method fig.4- typical reverse characteristics i n s t a n t a n e o u s r e v e r s e c u r r e n t . ( m a ) 0 20 40 60 80 100 120 140 0.1 1 10 100 1000 percent of ra ted peak reverse vol t age. (%) 0 t j = 1 0 0 c 0 t j = 2 5 c 0 t j = 7 5 c fig.5- typical junction cap acit ance j u n c t i o n c a p a c i t a n c e . ( p f ) .1 1.0 10 100 10 100 400 reverse vol t age. (v) 0 t j = 2 5 c f = 1 . 0 m h z v s i g = 5 0 m v p - p fig.1- maximum for w ard current dera ting cur ve a v e r a g e f o r w a r d c u r r e n t . ( a ) 50 60 70 80 90 100 1 10 120 170 160 150 140 130 0 1.0 2.0 o lead tempera ture. ( c) resistive or inductive load pcb mounted on 0.2x0.2" (5.0x5.0mm) copper p ad areas fig.3- typical for w ard characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t . ( a ) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 0.01 0.1 1.0 10.0 50 forw ard vol t age. (v) 0 t j = 2 5 c p u l s e w i d t h = 3 0 0 s 1 % d u t y c y c l e v ersion: a07


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